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PDF AO8832 Data sheet ( Hoja de datos )
| Número de pieza | AO8832 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8832
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8832 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8832 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 4.5V)
RDS(ON) < 31mΩ (VGS = 3.6V)
RDS(ON) < 39mΩ (VGS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
D1
1.6KΩ
S1
Maximum
30
±12
7
5.5
30
1.5
0.96
-55 to 150
G2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
67
110
62
Max
85
130
75
D2
1.6KΩ
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8832.PDF ] | |
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