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PDF AO8830 Data sheet ( Hoja de datos )
| Número de pieza | AO8830 | |
| Descripción | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8830 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AO8830 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8830L is a Green Product ordering option.
AO8830 and AO8830L are electrically identical.
Features
VDS (V) = 20V
ID = 6 A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 41mΩ (VGS = 2.5V)
RDS(ON) < 55mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1/D2
S1
S1
G1
1
2
3
4
8 D1/D2
7 S2
6 S2
5 G2
D1
1.6KΩ
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
6
4.8
30
1.5
0.94
-55 to 150
D2
1.6KΩ
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
115
70
Max
83
140
85
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8830.PDF ] | |
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