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Número de pieza | AO8808A | |
Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
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AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
Features
VDS (V) = 20V
ID = 7.9A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 2.5V)
RDS(ON) < 28mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
7.9
6.3
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO8808A.PDF ] |
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