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PDF AO8808 Data sheet ( Hoja de datos )
| Número de pieza | AO8808 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO8808
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX) rating.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8808 is Pb-free (meets
ROHS & Sony 259 specifications). AO8808L is a Green
Product ordering option. AO8808 and AO8808L are electrically
identical.
Features
VDS (V) = 20V
ID = 8A (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 2.5V)
RDS(ON) < 28mΩ (VGS = 1.8V)
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
8
6.3
30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO8808.PDF ] | |
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