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PDF STS5N15F4 Data sheet ( Hoja de datos )
| Número de pieza | STS5N15F4 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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STS5N15F4
N-channel 150 V, 0.057Ω, 5 A, SO-8
STripFET™ DeepGATE™ Power MOSFET
Features
Type
STS5N15F4
VDSS
150 V
RDS(on)
max
< 0.063 Ω
ID
5A
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Application
■ Switching applications
Description
This STripFET™ DeepGATE™ Power MOSFET
technology is among the latest improvements,
which have been especially tailored to minimize
on-state resistance, with a new gate structure,
providing superior switching performances.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS5N15F4
Marking
5U15-
Package
SO-8
Packaging
Tape and reel
July 2009
Doc ID 16083 Rev 1
1/11
www.st.com
11
1 page  
www.DataSShTeeSt45UN.c1o5mF4
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
(A)
100
10
OpLeirmatitioend ibnythmisaxarReDaSi(son)
Tj=150°C
Tc=25°C
Sinlge
pulse
AM04995v1
1
10ms
100ms
0.1
1s
0.01
0.1
1
10 100 VDS(V)
Figure 4. Output characteristics
ID
(A)
70 VGS=10V
60
6V
50
Figure 5. Transfer characteristics
AM04986v1
ID
(A)
70
VDS=10V
60
50
AM04987v1
40 40
30 30
5V
20 20
10
4V
0
0 5 10 15 VDS(V)
10
0
0
24
6 8 10 VGS(V)
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
AM04989v1
RDS(on)
(Ω)
140
AM04988v1
1.10
ID=3A
120 VGS=10V
1.05
100
80
1.00
60
0.95
0.90
-50 -25 0 25 50 75 100 125 150 TJ(°C)
40
20
0
0 1 2 3 4 5 ID(A)
Doc ID 16083 Rev 1
5/11
5 Page 
www.DataSShTeeSt45UN.c1o5mF4
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Doc ID 16083 Rev 1
11/11
11 Page | ||
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| PDF Descargar | [ Datasheet STS5N15F4.PDF ] | |
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