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PDF STS5N15F3 Data sheet ( Hoja de datos )
| Número de pieza | STS5N15F3 | |
| Descripción | Power MOSFETs | |
| Fabricantes | ST Microelectronics | |
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STS5N15F3
N-channel 150 V, 0.045 Ω, 5 A, SO-8
STripFET™ III Power MOSFET
Features
Type
STS5N15F3
VDSS
150 V
RDS(on)
max
< 0.057 Ω
ID
5A
■ Low on-resistance
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology
which is suitable for the most demanding DC-DC
converter applications where high efficiency is
required.
SO-8
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STS5N15F3
Marking
5R15-
Package
SO-8
Packaging
Tape and reel
March 2009
Rev 1
1/12
www.st.com
12
1 page  
STS5N15F3
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
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td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD= 75 V, ID= 2.5 A,
RG=4.7 Ω, VGS=10 V
Figure 13 on page 8
Min. Typ. Max. Unit
9 ns
13 ns
46 ns
20 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 5 A, VGS = 0
ISD = 5 A,
di/dt = 100 A/µs,
VR = 40 V, TJ = 150 °C
Figure 15 on page 8
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max Unit
5A
20 A
1.3 V
110 ns
498 nC
9.1 A
5/12
5 Page 
STS5N15F3
5 Revision history
Table 9. Document revision history
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Date
Revision
03-Mar-2009
1 First release
Revision history
Changes
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STS5N15F3.PDF ] | |
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