|
|
PDF SiHFP260 Data sheet ( Hoja de datos )
| Número de pieza | SiHFP260 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SiHFP260 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Power MOSFET
IRFP260, SiHFP260
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
230
42
110
Single
0.055
www.DataSheet4U.com
D
TO-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mouting hole.
It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247
IRFP260PbF
SiHFP260-E3
IRFP260
SiHFP260
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 708 µH, RG = 25 Ω, IAS = 46 A (see fig. 12).
c. ISD ≤ 46 A, dI/dt ≤ 230 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91215
S-81304-Rev. A, 16-Jun-08
LIMIT
200
± 20
46
29
180
2.2
1000
46
28
280
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 page  
www.DataSheet4U.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFP260, SiHFP260
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
RG
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91215
S-81304-Rev. A, 16-Jun-08
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFP260.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SiHFP260 | Power MOSFET ( Transistor ) | Vishay Siliconix |
| SIHFP260 | Power MOSFET ( Transistor ) | Vishay Siliconix |
| SiHFP264 | Power MOSFET ( Transistor ) | Vishay Siliconix |
| SiHFP264N | Power MOSFET ( Transistor ) | Vishay Siliconix |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |