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PDF SiHFP264N Data sheet ( Hoja de datos )
| Número de pieza | SiHFP264N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay Siliconix | |
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Power MOSFET
IRFP264N, SiHFP264N
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
250
VGS = 10 V
210
34
94
Single
0.060
www.DataSheet4U.com
D
TO-247
S
D
G
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well know for, provides the designer
with an ectremely efficient and reliable device for use in a
wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247
IRFP264NPbF
SiHFP264N-E3
IRFP264N
SiHFP264N
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 25 A, VGS = 10 V (see fig. 12).
c. ISD ≤ 25 A, dI/dt ≤ 500 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
250
± 20
44
31
170
2.6
520
25
38
380
8.7
- 55 to + 175
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Document Number: 91216
S-81274-Rev. A, 16-Jun-08
www.vishay.com
1
1 page  
IRFP264N, SiHFP264N
Vishay Siliconix
50
40
30
20
www.DataSheet4U.com
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
15 V
VDS L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91216
S-81274-Rev. A, 16-Jun-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SiHFP264N.PDF ] | |
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