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PDF AO4459 Data sheet ( Hoja de datos )
| Número de pieza | AO4459 | |
| Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO4459
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4459 uses advanced trench technology to provide
excellent RDS(ON) with low gate charge. This device is suitable
for use
www.DataSheet4U.com
as
a
load
switch
or
in
PWM
applications.
Standard
product AO4459 is Pb-free (meets ROHS & Sony 259
specifications). AO4459L is a Green Product ordering
option. AO4459 and AO4459L are electrically identical .
Features
VDS (V) = -30V
ID = -6.5A
(VGS = -10V)
RDS(ON) < 46mΩ (VGS = -10V)
RDS(ON) < 72mΩ (VGS = -4.5V)
SOIC-8
Top View
SD
SD
SD
GD
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-6.5
-5.3
-30
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
33
62
18
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO4459.PDF ] | |
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