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PDF AO6804 Data sheet ( Hoja de datos )
| Número de pieza | AO6804 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AO6804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6804 uses advanced trench technology to
www.DataSheet4Up.rcoovmide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device
is suitable for use as a load switch or in PWM
applications. AO6804 is Pb-free (meets ROHS & Sony
259 specifications).
VDS = 20V
ID = 5.0A
(VGS = 4.5V)
Typical Rds
RDS(ON) < 24mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 4.0V)
RDS(ON) < 28mΩ (VGS = 3.1V)
RDS(ON) < 31mΩ (VGS = 2.5V)
TSOP6
Top View
S1 1 6 G1
D1/D2 2 5 D1/D2
S2 3 4 G2
D1 D2
G1
S1
G2
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Continuous Drain
Current A
TA=25°C
TA=70°C
54
ID 4 3.2
Pulsed Drain Current B
IDM 25
Power Dissipation A
TA=25°C
TA=70°C
PD
1.3 0.8
0.8 0.5
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady State
Steady State
Symbol
RθJA
RθJL
Typ
76
118
54
Max
95
150
68
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AO6804.PDF ] | |
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