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PDF AO6802 Data sheet ( Hoja de datos )
| Número de pieza | AO6802 | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO6802
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6802 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6802 is Pb-free
(meets ROHS & Sony 259 specifications). AO6802L
is a Green Product ordering option. AO6802 and
AO6802L are electrically identical.
Features
VDS (V) = 30V
ID = 3.1 A (VGS = 10V)
RDS(ON) < 75mΩ (VGS = 10V)
RDS(ON) < 115mΩ (VGS = 4.5V)
TSOP6
Top View
G1 1 6
S2 2 5
G2 3 4
D1
S1
D2
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
3.1
2.4
12
1.15
0.73
-55 to 150
Thermal Characteristics each FET
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
78
106
64
Max
110
150
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO6802.PDF ] | |
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