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PDF STS6DNF30V Data sheet ( Hoja de datos )
| Número de pieza | STS6DNF30V | |
| Descripción | DUAL N - CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STS6DNF30V
DUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS6DNF30V 30 V
www.DataSheet4U.com
<0.030Ω (@4.5V)
<0.038Ω (@2.5V)
6A
s TYPICAL RDS(on) = 0.026Ω (@4.5V)
s TYPICAL RDS(on) = 0.030Ω (@2.5V)
s ULTRA LOW THRESHOLD GATE DRIVE (2.5V)
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
s BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT
s DC-DC CONVERTERS
s POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
Single Operation
Drain Current (continuos) at TC = 100°C
Single Operation
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
(q) Pulse width limited by safe operating area
July 2002
Value
30
30
±12
6
3.8
24
2
1.6
Unit
V
V
V
A
A
A
W
W
1/8
1 page  
STS6DNF30V
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS6DNF30V.PDF ] | |
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