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PDF STS6DNF30L Data sheet ( Hoja de datos )
| Número de pieza | STS6DNF30L | |
| Descripción | DUAL N - CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de STS6DNF30L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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® STS6DNF30L
DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8
STripFET™ POWER MOSFET
TYPE
V DSS
RDS(on)
ID
STS6DNF30L
30 V < 0.025 Ω 6 A
www.DataSheet4Us.comTYPICAL RDS(on) = 0.022 Ω
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Single O peration
Drain Current (continuous) at Tc = 100 oC
Single O peration
IDM(•) Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC Dual Operation
T otal Dissipation at Tc = 25 oC Sinlge Operation
(•) Pulse width limited by safe operating area
April 1999
Value
30
30
± 20
6
3 .8
24
2
1 .6
Un it
V
V
V
A
A
A
W
W
1/8
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STS6DNF30L
Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STS6DNF30L.PDF ] | |
Hoja de datos destacado
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| STS6DNF30L | DUAL N - CHANNEL POWER MOSFET | STMicroelectronics |
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