|
|
Número de pieza | IXFN23N100 | |
Descripción | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IXFN23N100 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 24N100
IXFN 23N100
VDSS
ID25
1000 V 24 A
1000 V 23 A
têê ≤ 250 ns
RDS(on)
0.39 Ω
0.43 Ω
www.DataSheet4US.cyommbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
IDM TC = 25°C; Note 1
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
24N100
23N100
24N100
23N100
1000
1000
V
V
±20 V
±30 V
24 A
23 A
96 A
92 A
24 A
60 mJ
3J
5 V/ns
600 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th) VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = 0.5 • ID25
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0 5.0 V
±100 nA
TJ = 25°C
TJ = 125°C
23N100
24N100
100 µA
2 mA
0.43 Ω
0.39 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
báíÜÉê=pçìêÅÉ=íÉêãáå~ä=~í=ãáåá_il`=Å~å=ÄÉ=ìëÉÇ
~ë=j~áå=çê=hÉäîáå=pçìêÅÉ
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
«= OMMM= fuvp= ^ää= êáÖÜíë= êÉëÉêîÉÇ
VURVTa= ENMLMMF
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet IXFN23N100.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFN23N100 | (IXFN23N100 / IXFN24N100) HiPerFET-TM Power MOSFET | IXYS Corporation |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |