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Número de pieza | SW630 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Samwin | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SW630 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! SAMWIN
SW630
Features
N-Channel MOSFET
BVDSS (Minimum)
RDS(ON) (Maximum)
ID
Qg (Typical)
PD (@TC=25 )
: 200 V
: 0.4 ohm
: 9.0 A
: 26 nc
: 72 W
General Description
This power MOSFET is produced in CHMC with
advanced VDMOS technology of SAMWIN. This
technology enable power MOSFET to have better
characteristics, such as fast switching time, low on
resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is
usually used at high efficient DC to DC converter
block and SMPS. It’s typical application is TV and
monitor.
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D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain to Source Voltage
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
IDM Drain Current Pulsed
(Note 1)
VGS
EAS
EAR
dv/dt
PD
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
Derating Factor above 25℃
(Note 2)
(Note 1)
(Note 3)
TSTG,TJ
TL
Operating junction temperature &Storage temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
Value
200
9
6.8
36
±30
160
7.2
5.0
72
0.57
-55~+150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 1.73
- 0.5 -
- - 62.5
REV0.1
1/6
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/ W
℃/ W
℃/ W
04.10.1
1 page SAMWIN
SW630
50KΩ
200nF
300nF
VGS
1mA
www.DataSheet4U.com
Same Type
as DUT
VGS
10V
VDS
Qgs
Qg
Qgd
DUT
Charge
VDS
10V
Pulse
Generator
RG
Fig 12. Gate Charge test Circuit & Waveforms
RL
VDD
VDS
(0.5 rated VDS)
90%
DUT
Vin
10%
td(on) tr
ton
Fig 13. Switching test Circuit & Waveforms
tf
td(off)
toff
VDS
RG
10V
L
VDD
EAS=
1
---
2
LLIAS2------B--V--D--S-S--
BVDSS-VDD
DUT
BVDSS
IAS
VDD
ID(t)
VDS(t)
tp Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
REV0.1
04.10.1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SW630.PDF ] |
Número de pieza | Descripción | Fabricantes |
SW630 | N-Channel MOSFET | Samwin |
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