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Datasheet SW630 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | SW630 | N-Channel MOSFET SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W
SW630
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better chara |
Samwin |
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1 | SW630A | MOSFET ( Transistor ) SAMWIN
SW630A
N-channel TO-220/D-PAK MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.4 Ω)@VGS=10V ■ Gate Charge (Typ 22nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
12 3
1 2 3
BVDSS : 200V ID : 10A RDS(ON) : 0.4ohm
2
1. Gate 2. Drain 3. Source
General |
SEMIPOWER |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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