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PDF STGB8NC60KD Data sheet ( Hoja de datos )
| Número de pieza | STGB8NC60KD | |
| Descripción | (STGx8NC60KD) Short circuit rated PowerMESH IGBT | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STGB8NC60KD - STGD8NC60KD
STGP8NC60KD
N-channel 600V - 8A - D2PAK / DPAK / TO-220
Short circuit rated PowerMESH™ IGBT
Features
Type
STGB8NC60KD
STGD8NC60KD
STGP8NC60KD
VCES
600V
600V
600V
VCE(sat)Typ
@25°C
2.2V
2.2V
2.2V
IC
@100°C
8A
8A
8A
■ Lower on voltage drop (Vcesat)
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short circuit withstand time 10µs
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
Table 1. Device summary
Order codes
Marking
STGB8NC60KD
STGD8NC60KD
STGP8NC60KD
GB8NC60KD
GD8NC60KD
GP8NC60KD
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
Package
D²PAK
DPAK
TO-220
Packaging
Tape & reel
Tape & reel
Tube
October 2007
Rev 1
1/18
www.st.com
18
1 page  
STGB8NC60KD - STGD8NC60KD - STGP8NC60KD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 25°C
(see Figure 20)
VCC = 390V, IC =3A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 20)
Vcc = 390V, IC = 3A,
RGE = 10Ω, VGE =15V,
TJ=25°C
(see Figure 20)
Vcc = 390V, IC = 3A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 20)
Min. Typ. Max. Unit
17 ns
6 ns
655 A/µs
16.5 ns
6.5 ns
575 A/µs
33 ns
72 ns
82 ns
60 ns
106 ns
136 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG= 10Ω, VGE=15V, Tj=25°C
(see Figure 20)
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 125°C
(see Figure 20)
55
85
140
87
162
249
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/18
5 Page 
STGB8NC60KD - STGD8NC60KD - STGP8NC60KD
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category
of second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
11/18
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STGB8NC60KD.PDF ] | |
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