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PDF STGB8NC60K Data sheet ( Hoja de datos )
| Número de pieza | STGB8NC60K | |
| Descripción | (STGx8NC60K) Short circuit rated PowerMESH IGBT | |
| Fabricantes | ST Microelectronics | |
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STGB8NC60K - STGD8NC60K
STGP8NC60K
N-channel 600V - 8A - D2PAK / DPAK / TO-220
Short circuit rated PowerMESH™ IGBT
Features
Type
STGB8NC60K
STGD8NC60K
STGP8NC60K
VCES
600V
600V
600V
VCE(sat)Typ
@25°C
2.2V
2.2V
2.2V
IC
@100°C
8A
8A
8A
■ Lower on voltage drop (Vcesat)
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short circuit withstand time 10µs
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drivers
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “K” identifies a family
optimized for high frequency motor control
applications with short circuit withstand capability.
Table 1. Device summary
Order codes
Marking
STGB8NC60K
STGD8NC60K
STGP8NC60K
GB8NC60K
GD8NC60K
GP8NC60K
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
Package
D²PAK
DPAK
TO-220
Packaging
Tape & reel
Tape & reel
Tube
October 2007
Rev 1
1/17
www.st.com
17
1 page  
STGB8NC60K - STGD8NC60K - STGP8NC60K
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 25°C
(see Figure 19)
VCC = 390V, IC =3A
RG= 10Ω, VGE= 15V,
Tj=125°C
(see Figure 19)
Vcc = 390V, IC = 3A,
RGE = 10Ω, VGE =15V,
TJ=25°C
(see Figure 19)
Vcc = 390V, IC = 3A,
RGE=10Ω, VGE =15V,
Tj=125°C
(see Figure 19)
Min. Typ. Max. Unit
17 ns
6 ns
655 A/µs
16.5 ns
6.5 ns
575 A/µs
33 ns
72 ns
82 ns
60 ns
106 ns
136 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Eon(1)
Eoff(2)
Ets
Eon(1)
Eoff(2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390V, IC = 3A
RG= 10Ω, VGE=15V, Tj=25°C
(see Figure 19)
VCC = 390V, IC = 3A
RG= 10Ω, VGE= 15V,
Tj= 125°C
(see Figure 19)
55
85
140
87
162
249
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/17
5 Page 
STGB8NC60K - STGD8NC60K - STGP8NC60K
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
1.70 0.044
0.066
c 0.49
0.70 0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
F 1.23
1.32 0.048
0.051
H1 6.20
6.60 0.244
0.256
J1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93 0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85 0.147
0.151
Q 2.65
2.95 0.104
0.116
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STGB8NC60K.PDF ] | |
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