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PDF HI31C Data sheet ( Hoja de datos )
| Número de pieza | HI31C | |
| Descripción | NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9001
Issued Date : 1996.02.28
Revised Date : 2002.03.04
Page No. : 1/3
HI31C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI31C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-251
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current .............................................................................................................. 3 A
Characteristicswww.DataSheet4U.com (Ta=25°C)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
100
-
-
V IC=1mA, IE=0
BVCEO
100
-
-
V IC=30mA, IB=0
ICES - - 20 uA VCE=100V, VEB=0
ICEO - - 50 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V, IC=0
*VCE(sat)
-
- 1.2 V IC=3A, IB=375mA
*VBE(on)
-
- 1.8 V VCE=4V, IC=3A
*hFE1
25
-
-
VCE=4V, IC=1A
*hFE2
10
-
50
VCE=4V, IC=3A
fT 3 - - MHz VCE=10V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HI31C
HSMC Product Specification
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet HI31C.PDF ] | |
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