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PDF BST82 Data sheet ( Hoja de datos )
| Número de pieza | BST82 | |
| Descripción | SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
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SOT23 N CHANNEL ENHANCEMENT
MI ODE VERTICAL DMOS FET
IIssue 2 - October 1997
PARTMARKING DETAIL – O2
BST82
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain Source Voltage
Drain Source Voltage
(non repetitive peak tp ≤ 2ms)
Continuous Drain Current at Tamb=25°C
Drain Current Peak
Gate-Source Voltage
Max Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
VDS(sm)
ID
IDM
VGS
PD
Tj:Tstg
SOT23
VALUE
80
100
175
600
± 20
300
-55 to +150
UNIT
V
V
mA
mA
V
mW
°C
ELECTRIAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain Source
Breakdown Voltage
BVDSS
80
V IC=100µA
Gate Source
Threshold Voltage
VGS(th)
1.5
3.5 V
ID=1mA, VDS=VGS
Gate Body Leakage
Emitter Cut-Off
Current
IGSS
IDSS
100 nA
1 µA
VGS=20V
VDS=60V
Static Drain-Source
On-state Resistance
RDS(on)
7
10 Ω
ID=150mA, VGS=5V
Transfer Admittance | yfs |
Input Capacitance (2) Ciss
Common Source
Coss
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Crss
150
15 30
13 20
36
mS ID=175mA, VDS=5V
pF
pF VDS=10V, VGS=0V
f=1MHz
pF
Switching Times
Ton
Toff
4 10 ns ID=175mA, VDD=50V
4 10 ns VGS=0 to 10V
(1) Swithcing times measured at 150Ω source impedance and <5ns rise time on a pulse generator
(2) Sample test
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
1 page | ||
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