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PDF BST80 Data sheet ( Hoja de datos )
| Número de pieza | BST80 | |
| Descripción | N-channel enhancement mode vertical D-MOS transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BST80
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC13b
1997 Jun 20
1 page  
Philips Semiconductors
N-channel enhancement mode
vertical D-MOS transistor
1.2
handbook, halfpage
ID
(A)
0.8
(1)
MDA173
(2)
(3)
0.4
(4)
(5)
0
0 2 4 6 8 10
VDS (V)
Tj = 25 °C.
(1) VGS = 10 V.
(2) VGS = 6 V.
(3) VGS = 5 V.
(4) VGS = 4 V.
(5) VGS = 3 V.
Fig.6 Output characteristics; typical values.
Product specification
BST80
handbook1, .h2alfpage
ID
(A)
0.8
MDA172
0.4
0
0 2 4 6 8 10
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.7 Transfer characteristic; typical values.
103
handbook, halfpage (1)
ID
(mA)
(2)
(3)
(4)
MDA171
102
handbook1, .h2alfpage
k
1.1
1
0.9
MDA175
10
0 2 4 6 8 10
RDSon (Ω)
Tj = 25 °C.
(1) VGS = 10 V.
(2) VGS = 6 V.
(3) VGS = 5 V.
(4) VGS = 4 V.
Fig.8 Drain current as a function of drain-source
on-state resistance; typical values.
0.8
0.7
−50 0 50 100 Tj (oC) 150
k = -V----GV----SG---t-Sh---t--ha---t--a--2-t--5--T--°--j-C---
VGSth at 1 mA.
Fig.9 Temperature coefficient of gate-source
threshold voltage; typical values.
1997 Jun 20
5
5 Page 
Philips Semiconductors
N-channel enhancement mode
vertical D-MOS transistor
NOTES
Product specification
BST80
1997 Jun 20
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet BST80.PDF ] | |
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