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PDF AO4613 Data sheet ( Hoja de datos )
| Número de pieza | AO4613 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4613
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4613 uses advanced trench
technology MOSFETs to provide
excellent RDS(ON) and low gate charge.
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4613 is Pb-free
(meets ROHS & Sony 259
specifications). AO4613L is a Green
Product ordering option. AO4613 and
AO4613L are electrically identical
www.DataSheet4U.com
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
Features
n-channel
p-channel
VDS (V) = 30V
-30V
ID = 7.2A (VGS=10V) -6.1A (V GS=10V)
RDS(ON)
RDS(ON)
< 24mΩ (VGS=10V)
< 37m Ω (VGS = -10V)
< 40mΩ (VGS=4.5V)
< 60m Ω (VGS = -4.5V)
ESD rating: 1500V (HBM)
D2 D1
G2 G1
S2
n-channel
S1
p-channel
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
7.2
6.1
30
TA=25°C
Power Dissipation TA=70°C
Avalanche Current B
Repetitive avalanche energy 0.1mH B
PD
IAR
EAR
2
1.44
15
11
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-6.1
-5.1
-30
2
1.44
20
20
-55 to 150
Units
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Symbol
RθJA
RθJL
RθJA
RθJL
Typ
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Max
55 62.5
92 110
37 50
48 62.5
84 110
37 50
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4613
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
VGS=-10V, ID=-6.1A
VGS=-4.5V, ID=-4A
Forward Transconductance
VDS=-5V, ID=-6.1A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-6.1A
VGS=-10V, VDS=-15V, RL=2.5Ω,
RGEN=3Ω
IF=-6.1A, dI/dt=100A/µs
IF=-6.1A, dI/dt=100A/µs
Min
-30
-1
30
Typ Max Units
-1
-5
10
-1.7 -3
28
39
45
12.5
-0.77
37
48
60
-1
3
V
µA
µA
V
A
mΩ
mΩ
S
V
A
1040
179
134
5
1250
10
pF
pF
pF
Ω
16.8 22
8.7 12
3.4
5
9 12
5.7 11
22.7 30
10.2 20
21.7 27
13.6 18
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθθJJAA is measured with the device mounted on 1in22 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value in
vaanlyueginveannyapapglicivaetnionapdpelipceantidosn odneptheendusseorn'sthspeeucsifeicr'sbosapredcidfiecsbigona.rdThdeesciugrnre. nTthreatcinugrreisntbraasteindgoisn bthaeset≤d 1o0nsththeetr≤m1a0lsrethsiesrtmanaclerersaitsintagn.ce rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θθJJAA is the sum of the thermal impedence from junction to lead RθθJJLL and lead to ambient. RθJL and RθJC are equivalent terms referring to
tDh.eTrmhealsrteastiicstcahnacreacfrtoemrisjtuicnsctinionFigtourdersai1n tleoa6d,.12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
DE.. TThheessetateticstcshaarreacpteerrfiosrtmicsedinwFitighutrheesd1etvoic6e,1m2o,1u4ntaerdeoonbt1aiinne2 dFRus-4inbgo8a0rµdswpiuthls2eosz, .dCutoypcpyecrl,ein0.a5%stilml aairx.environment
Ecu. rTvheepsreovteidsetss aaresinpgelrefoprmulesed rwaittihngth. e device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment
with
with
TA=25°C.
TA=25°C.
The
The
SOA
SOA
curve
provides a single pulse rating.
F. Rev 0: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
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| PDF Descargar | [ Datasheet AO4613.PDF ] | |
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