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PDF AO4610 Data sheet ( Hoja de datos )
| Número de pieza | AO4610 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO4610
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4610 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET
to minimize body diode losses.Standard
Product AO4610 is Pb-free (meets ROHS &
Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.
Features
n-channel
VDS (V) = 30V
ID = 8.5A(VGS=10V)
RDS(ON)
< 18mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
VF<0.5V@1A
p-channel
-30V
-7.1A(VGS = -10V)
RDS(ON)
< 25mΩ (VGS = -10V)
< 40mΩ (VGS = -4.5V)
D2 D1
www.DataSheet4U.com
S2/A 1 8 D2/K
G2 2 7 D2/K
S1 3 6 D1
G1 4 5 D1
SOIC-8
K
G2 A
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
8.5
6.6
30
Power Dissipation
TA=25°C
TA=70°C
PD
2
1.28
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±20
-7.1
-5.6
-30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward TA=25°C
Current A
TA=70°C
Pulsed Forward CurrentB
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
Symbol
VDS
ID
IDM
PD
TJ, TSTG
Maximum Schottky
30
3
2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.
1 page  
AO4610
N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
0
VDS=15V
ID=8.5A
4 8 12 16
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
1500
1250
1000
Ciss
750
500
Coss
250
0 Crss
0 5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
RDS(ON)
limited
10.0
1ms
10ms
0.1s
100µs 10µs
1.0
TJ(Max)=150°C
TA=25°C
1s
10s
DC
0.1
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
50
TJ(Max)=150°C
40 TA=25°C
30
20
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
1
0.1
0.01
0.00001
Single Pulse
PD
Ton T
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AO4610.PDF ] | |
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