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PDF CMM0016 Data sheet ( Hoja de datos )
| Número de pieza | CMM0016 | |
| Descripción | GaAs MMIC 1W Power Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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2.0-20.0 GHz GaAs MMIC
1W Power Amplifier
October 2006 - Rev 13-Oct-06
Features
Small Size: 2.32x1.30x0.076mm
Integrated On-Chip DC Blocking
Single Bias Operation
Directly Cascadable - Fully Matched
Unconditionally Stable
P1dB: 29 dBm, Typ. @ 18 GHz
Linear Gain: 9.5 dB, Typ. @ 18 GHz
pHEMT Technology
Silicon Nitride Passivation
Chip Diagram
Units: mm
CMM0016
1
Specifications (TA= 25°C,Vdd = 12V)
Parameters
Units
Min
Frequency Range
GHz
2.0
Linear Gain
www.DataSheet4U.com Gain Flatness
dB 8.5
±dB
Power Output: 2-18 GHz (@1 dB Gain Compression)
Power Output: 2-20 GHz (@1 dB Gain Compression)
dBm
dBm
28.5
26.5
P1dB Variation (over operating frequency)
dBm
Saturated Output Power: 2-18 GHz
Saturated Output Power: 2-20 GHz
dBm
dBm
29.5
27.5
Input Return Loss
dB
Output Return Loss
dB
Current
mA 650
Thermal Resistance
Stability 2
°C/W
Unconditionally Stable
Typ
690
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4).
2. Stability factor measured on-wafer.
Max
20.0
12.5
1.5
5.0
-10.0
-10.0
730
15.7
1
Absolute Maximum Ratings
Parameter
Rating
Drain Voltage
9.0V (min.) / 13.0V (max.)
Drain Current
750 mA
Continuous Power Dissipation
9.5 W
Input Power
20 dBm
Storage Temperature
-50°C to +150°C
Channel Temperature
175°C
Operating Backside Temperature -40°C to (See note 2)
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 15.7) [°C].
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
2.0-20.0 GHz GaAs MMIC
1W Power Amplifier
October 2006 - Rev 13-Oct-06
CMM0016
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human
body and the environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As
used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
(2) A critical component is any component of a life support device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in
antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static
workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp
tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.
The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD,
Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If
eutectic mounting is used, then a fluxless gold-tin (AuSn) preform, approximately 0.001 thick, placed between the die
and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to
ensure total wetting to prevent void formation in a nitrogen2atmosphere is recommended.The gold-tin eutectic
(80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided).The work
station temperature should be 310º C +/- 10º C. Exposure to these extreme temperatures should be kept to minimum.
The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force
impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the
die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005")
99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001")
diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-
compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content
of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the
bond pads on the die to the package or substrate. All bonds should be as short as possible.
Ordering Information
The CMM0016-BDis available in bare die and is shipped in Gel Pak.
Part Number for Ordering
Package
CMM0016-BD
Bare Die
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 5
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CMM0016.PDF ] | |
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