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PDF AS6UA5128 Data sheet ( Hoja de datos )

Número de pieza AS6UA5128
Descripción low-power CMOS SRAM
Fabricantes Alliance Semiconductor 
Logotipo Alliance Semiconductor Logotipo



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No Preview Available ! AS6UA5128 Hoja de datos, Descripción, Manual

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October 2000
AS6UA5128
®
2.3V to 3.6V 512K×8 Intelliwatt low-power CMOS SRAM
Features
• AS6UA5128
• Intelliwatt™ active power circuitry
• Industrial and commercial temperature ranges available
• Organization: 524,288 words × 8 bits
• 2.7V to 3.6V at 55 ns
• 2.3V to 2.7V at 70 ns
• Low power consumption: ACTIVE
- 144 mW at 3.6V and 55 ns
- 68 mW at 2.7V and 70 ns
• Low power consumption: STANDBY
- 72 µW max at 3.6V
- 41 µW max at 2.7V
- 28 µW max at 2.3V
• 1.2V data retention
• Equal access and cycle times
• Easy memory expansion with CS, OE inputs
• Smallest footprint packages
- 36(48)-ball FBGA
- 32-pin TSOP I and TSOP II packages are available on
Alliance AS6UB5128 product family (available January
2001)
• ESD protection 2000 volts
• Latch-up current 200 mA
Logic block diagram
VCC
GND
Input buffer
A0
A1
A2
A3
512K×8
A4 Array
A5
A6
(4,194,304)
A7
A8
Column decoder
Control
circuit
I/O8
I/O1
WE
OE
CS
Pin arrangement
36(48)-CSP BGA Package (shading indicates no ball)
123456
A A0 A1 NC A3 A6 A8
B I/O5 A2 WE A4 A7 I/O1
C I/O6
NC A5
I/O2
D VSS
VCC
E VCC
VSS
F I/O7
A18 A17
I/O3
G I/O8 OE CS A16 A15 I/O4
H A9 A10 A11 A12 A13 A14
Selection guide
Product
AS6UA5128
AS6UA5128
Min
(V)
2.7
2.3
VCC Range
Typ2
(V)
3.0
2.5
Max
(V)
3.6
2.7
Speed
(ns)
55
70
Power Dissipation
Operating (ICC)
Standby (ISB1)
Max (mA)
Max (µA)
2 20
1 15
10/6/00
ALLIANCE SEMICONDUCTOR
1
Copyright ©2000 Alliance Semiconductor. All rights reserved.

1 page




AS6UA5128 pdf
Write cycle (over the operating range)11
–55
Parameter
Symbol Min Max
Write cycle time
Chip select to write end
Address setup to write end
Address setup time
Write pulse width
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
tWC
tCW
tAW
tAS
tWP
tAH
tDW
tDH
tWZ
tOW
55
40
40
0
35
0
25
0
0
5
20
Write waveform 1 (WE controlled)10,11
Address
tWC
tAW
WE
tAS
tWP
DIN
tWZ
DOUT
®
–70
Min Max
70 –
60 –
60 –
0–
55 –
0–
30 –
0–
0 20
5–
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAH
tDW
Data valid
tDH
tOW
Write waveform 2 (CS controlled)10,11
tWC
tAW
Address
tAS tCW
CS
tWP
WE
tWZ
DIN
DOUT
tDW
Data valid
tAH
tDH
AS6UA5128
Notes
12
12
4, 5
4, 5
4, 5
10/6/00 ALLIANCE SEMICONDUCTOR
5

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