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PDF TPCS8303 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8303 | |
| Descripción | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type | |
| Fabricantes | Toshiba Semiconductor | |
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TPCS8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCS8303
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 18 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.45~−1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
−20
−20
±12
−5
−20
1.1
0.75
0.6
0.35
16.3
−5
0.075
150
−55~150
Note 1, Note 2, Note 3, Note 4, Note 5: See the next page.
Unit
V
V
V
A JEDEC
JEITA
―
―
TOSHIBA
2-3R1E
W Weight: 0.035 g (typ.)
Circuit Configuration
W
8765
mJ
A
mJ
°C
1234
°C
This transistor is an electrostatic-sensitive device. Please handle with caution.
1 2004-07-06
1 page  
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RDS (ON) – Ta
60
Common source
50 Pulse test
ID = −5 A
40
30 VGS = −2 V
−1.3
−2.5
20 VGS = −2.5 V
10 VGS = −4.5 V
ID = −5 A, −2.5 A, −1.3 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCS8303
IDR – VDS
−100
−10 −10 V −5 −3 −1 VGS = 0 V
−1
−0.1
0
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1.0
Drain−source voltage VDS (V)
1.2
10000
3000
Capacitance – VDS
Ciss
1000
300
100
30
10
−0.1
Coss
Crss
Common source
Ta = 25°C
VGS = 0 V
f = 1 MHz
−0.3 −1 −3 −10 −30
Drain−source voltage VDS (V)
−100
1.25
(1)
1.0
(2)
0.75
(3)
0.5
(4)
0.25
PD – Ta
Device mounted on a glass-epoxy
board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation
(Note 3b)
Device mounted on a glass-epoxy
board (b)
(Note 2b)
(3) Single-device operation
(Note 3a)
(4) Single-device value at dual
operation
(Note 3b)
t = 10 s
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Vth – Ta
−1.2
−1.0
−0.8
−0.6
−0.4
Common source
VDS = −10 V
−0.2 ID = −200 µA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
Dynamic input/output
characteristics
−20 Common source
VDD = −16 V
ID = −5 A
Ta = 25°C, Pulse test
−15
−8
−6
−10
−8
VDS
−4
−8 −4
VDD = −16 V
−5 −4
VGS
−2
00
0 10 20 30 40
Total gate charge Qg (nC)
5 2004-07-06
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8303.PDF ] | |
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