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PDF TPCS8302 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8302 | |
| Descripción | Lithium lon Battery Applications Notebook PC Applications Portable Machines and Tools | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCS8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCS8302
Lithium Ion Battery Applications
Notebook PC Applications
Portable Machines and Tools
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 12 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
• Enhancement-mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
IAR
EAR
Tch
Tstg
−20
−20
±12
−5
−20
1.1
0.75
0.6
0.35
32.5
−5
0.075
150
−55~150
V
V
V
A JEDEC
JEITA
―
―
TOSHIBA
2-3R1E
W Weight: 0.035 g (typ.)
Circuit Configuration
W
8765
mJ
A
mJ
°C
1234
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), please see next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-05-07
1 page  
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RDS (ON) – Ta
80
70 Common source
Pulse test
60
50
VGS = −2 V
40
ID = −5 A
−2.5 A
30
20 VGS = −2.5 V
10 VGS = −4.5 V
−2 A
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPCS8302
IDR – VDS
−100
−30
−10
−3
−1
−0.3
−0.1
0
−5 V
−3 V
−1 V
0V
VGS = 1 V
Common source
Ta = 25°C
Pulse test
0.2 0.4 0.6 0.8 1.0
Drain-source voltage VDS (V)
1.2
10000
Capacitance – VDS
3000
1000
300
Ciss
Coss
Crss
100
Common source
Ta = 25°C
30 VGS = 0 V
f = 1 MHz
10
−0.1 −0.3
−1
−3
−10 −30
Drain-source voltage VDS (V)
−100
Vth – Ta
−1.2
Common source
−1.0
VDS = −10 V
ID = −200 µA
−0.8
Pulse test
−0.6
−0.4
−0.2
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
1.25
(1)
1.0
(2)
0.75
(3)
0.5
(4)
0.25
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
−20
Common source
VDD = −16 V
−16
ID = −5 A
Ta = 25°C, Pulse test
−10
−8
VDS
−12
−8 V
−8
−4 V
−4
−8 V
−6
VGS
−4 V
VDD = −16 V
−4
−2
00
0 10 20 30 35
Total gate charge Qg (nC)
5 2002-05-07
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8302.PDF ] | |
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