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PDF MSM56V16160F Data sheet ( Hoja de datos )
| Número de pieza | MSM56V16160F | |
| Descripción | 2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM | |
| Fabricantes | OKI electronic componets | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MSM56V16160F (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
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Semiconductor
This version : Sep.1999
MSM56V16160F
2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s
CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL
compatible.
FEATURES
· Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell
· 2-bank ´ 524,288-word ´ 16bit configuration
· 3.3V power supply ± 0.3V tolerance
· Input : LVTTL compatible
· Output : LVTTL compatible
· Refresh : 4096 cycles/64 ms
· Programmable data transfer mode
- CAS Latency (1,2,3)
- Burst Length (1,2,4,8,Full page)
- Data scramble (sequential , interleave)
· CBR auto-refresh, Self-refresh capability
· Package:
50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160F-xxTS-K)
xx : indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16160F-8
MSM56V16160F-10
Max.
Frequency
125MHz
100MHz
Access Time (Max.)
tAC2
9ns
tAC3
6ns
9ns 9ns
1/30
1 page  
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
VCC Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
VIN, VOUT
VCC, VCCQ
Tstg
PD*
IOS
Topr
*: Ta = 25°C
MSM56V16160F
(Voltages referenced to VSS)
Rating
-0.5 to VCC + 0.5
-0.5 to 4.6
-55 to 150
600
50
0 to 70
Unit
V
V
°C
mW
mA
°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC, VCCQ
VIH
VIL
Min.
3.0
2.0
-0.3
(Voltages referenced to VSS = 0V)
Typ.
3.3
¾
¾
Max.
3.6
VCC + 0.2
0.8
Unit
V
V
V
Capacitance
Parameter
Input Capacitance (CLK)
Input Capacitance
(RAS, CAS, WE, CS, CKE, UDQM, LDQM, A0-A11)
Input/Output Capacitance (DQ1-DQ16)
Symbol
CCLK
CIN
COUT
(VBIAS = 1.4V, Ta = 25°C, f = 1MHz)
Min.
2.5
Max.
4
Unit
pF
2.5 5 pF
4 6.5 pF
5/30
5 Page 
· Single Bit Read-Write-Read Cycle (Same Page) @CAS Latency=2, Burst Length=4
MSM56V16160F
CLK
tCH
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
CKE
tCC
tCL
High
CS
RAS
CAS
ADDR
A11
tHI
tSI
tSI
Ra
tHI
BS
tHI
tSI
Ca
BS
tSI
ICCD
tSI
Cb Cc
tHI
BS BS
BS
A10 Ra
tAC
tOHZ
tHI
DQ
Qa Db
Qc
tOLZ
tOH
lOWD
tSI
tHI
WE
UDQM,
LDQM
tSI
Row Active
Write Command
Precharge Command
Read Command
Read Command
11/30
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MSM56V16160F.PDF ] | |
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