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PDF MSM56V16160DH Data sheet ( Hoja de datos )
| Número de pieza | MSM56V16160DH | |
| Descripción | 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM | |
| Fabricantes | OKI electronic componets | |
| Logotipo |  |
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E2G1049-18-33
¡¡SemicondSucetormiconductor
ThisMvSerMsi5o6nV: 1M61ar6.01D9/9D8 H
MSM56V16160D/DH
2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM,
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
inputs and outputs are LVTTL compatible.
FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank ¥ 524,288-word ¥ 16-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
– CAS latency (1, 2, 3)
– CAS latency (2, 3)*1
– Burst length (1, 2, 4, 8, full page)
– Burst length (1, 2, 4, 8)*1
– Data scramble (sequential, interleave)
*1 : H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
50-pin 400 mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160D/DH-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
Max.
Frequency
100 MHz
83 MHz
66 MHz
Access Time (Max.)
tAC2
9 ns
tAC3
9 ns
14 ns
10 ns
9 ns 9 ns
1/30
1 page  
¡ Semiconductor
MSM56V16160D/DH
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to VSS
VCC Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
VIN, VOUT
VCC, VCCQ
Tstg
PD*
IOS
Topr
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
VCC, VCCQ
VIH
VIL
Capacitance
Parameter
Input Capacitance (A0 - A11)
Input Capacitance (CLK, CKE, CS,
RAS, CAS, WE, UDQM, LDQM)
Input/Output Capacitance
(DQ1 - DQ16)
Symbol
CIN1
CIN2
COUT
Rating
(Voltages referenced to VSS)
Unit
–0.5 to VCC + 0.5
–0.5 to 4.6
V
V
–55 to 150
°C
600 mW
50 mA
0 to 70
°C
Min.
3.0
2.0
–0.3
(Voltages referenced to VSS = 0 V)
Typ.
Max.
Unit
3.3 3.6
V
— VCC + 0.2
V
— 0.8 V
Min.
2
2
(VCC = 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Max.
Unit
5 pF
5 pF
2 7 pF
5/30
5 Page 
¡ Semiconductor
MSM56V16160D/DH
Single Bit Read-Write-Read Cycle (Same Page) @ CAS Latency = 2, Burst Length = 4
tCH
CLK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
tCC tCL
CKE
High
CS
tHI
RAS
tSI
CAS
tSI
,,,ADDR
Ra
tHI
tSI
Ca
tHI
tSI
lCCD
tSI
Cb Cc
tHI
A11 BS BS
BS BS BS
A10 Ra
DQ
WE
UDQM,
LDQM
tOLZ
tOH
tOHZ
lOWD
tAC
Qa
tHI
Db
tSI
tHI
Qc
tSI
,,RowActive
Write Command Precharge Command
Read Command
Read Command
11/30
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MSM56V16160DH.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| MSM56V16160D | 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM | OKI electronic componets |
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