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PDF MTP6N60 Data sheet ( Hoja de datos )

Número de pieza MTP6N60
Descripción N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Fabricantes ST Microelectronics　
Logotipo ST Microelectronics Logotipo



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No Preview Available ! MTP6N60 Hoja de datos, Descripción, Manual

MTP6N60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
MTP6N60
VDSS
600 V
R DS( on)
< 1.2 Ω
ID
6.8 A
s TYPICAL RDS(on) = 1 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
ID M(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
Value
600
600
± 20
6.8
4.2
30
125
1
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /oC
oC
oC
1/9

1 page




MTP6N60 pdf
Capacitance Variations
MTP6N60
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9

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