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Datasheet MTP6N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | MTP6N60 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MTP6N60
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE MTP6N60
s s s s s
V DSS 600 V
R DS( on) < 1.2 Ω
ID 6.8 A
TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION
3 1 2
APPLICATIONS HIGH C |
 ST Microelectronics |
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| 3 | MTP6N60 | Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 2 | MTP6N60E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP6N60E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP6N60E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide e |
 Motorola Semiconductors |
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| 1 | MTP6N60E | Power Field Effect Transistor MTP6N60E
Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high e |
 ON Semiconductor |
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