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PDF 2SK3374 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3374 | |
| Descripción | Field Effect Transistor Silicon N Channel MOS Type | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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2SK3374
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
2SK3374
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.)
· High forward transfer admittance: ïYfsï = 0.8 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
450
450
±30
1
2
1.3
122
1
0.13
150
-55 to150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient
Rth (ch-a)
96.1 °C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 203 mH, RG = 25 W, IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-08-09
1 page  
2SK3374
3
1
0.5 Duty = 0.5
0.3 0.2
0.1
0.05
0.03
0.1
0.05
0.02
0.01
0.01
0.003
0.001
0.0005
10 m
100 m
rth - tw
Single Pulse
PDM
t
T
Duty = t/T
Rth (ch-a) = 96.1°C/W
1m
10 m
100 m
1
10 100
Pulse width tw (S)
Safe operating area
10
ID max (pulsed) *
1 ID max (continuous)
100 ms *
1 ms *
0.1
DC operation
Ta = 25°C
0.01
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.001
0.1 1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS - Tch
150
120
90
60
30
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
-15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 W
VDD = 90 V, L = 203 mH
Wave form
ΕAS
=
1
2
×L
×I2
×
ççèæ
BVDSS
BVDSS - VDD
÷÷øö
5 2002-08-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3374.PDF ] | |
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