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Número de pieza | 2SK3372 | |
Descripción | Silicon N-Channel Junction | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK3372 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Silicon Junction FETs (Small Signal)
2SK3372
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
• High mutual conductance gm
• Low noise voltage of NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage
Drain-gate voltage
Drain-source current
Drain-gate current
Gate-source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
100
−20 to +80
−55 to +125
Unit
V
V
mA
mA
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Drain
2: Source
3: Gate
SSSMini3-F1 Package
Marking Symbol: 1H
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Drain current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
Electrostatic discharge *3
Symbol
ID *1
IDSS
gm
NV
GV1
GV2
GV3
∆GV. f*2
GV2 − GV1
GV1 − GV3
ESD
Conditions
VDS = 2.0 V, RD = 2.2 kΩ ± 1%
VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0
VD = 2.0 V, VGS = 0, f = 1 kHz
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, A-Curve
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
VD = 12 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
VD = 1.5 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
C = 200 pF, R = 0 Ω
Min
100
107
660
−7.5
−4.0
−8.0
0
0
±200
Typ
1 600
−4.7
−1.5
−5.0
0
Max
460
470
4
1.7
4.0
1.7
Unit
µA
µS
mV
dB
dB
V
Note) *1: ID is assured for IDSS.
*2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
*3: Test method of electrostatic discharge are based on Standard of Electronic Industries Association of Japan EIAJ ED-4701
Environmental and endurance test methods for semiconductor devices. Judgment standard is product specification.
Publication date: April 2002
SJF00032AED
1
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SK3372.PDF ] |
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