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PDF MMBT6427LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT6427LT1 | |
| Descripción | Darlington Transistor(NPN Silicon) | |
| Fabricantes | ON | |
| Logotipo |  |
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MMBT6427LT1
Preferred Device
Darlington Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
40 Vdc
40 Vdc
12 Vdc
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
COLLECTOR 3
BASE
1
EMITTER 2
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
1V M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
1V = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBT6427LT1 SOT−23 3,000 / Tape & Reel
MMBT6427LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBT6427LT1/D
1 page  
MMBT6427LT1
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
ZqJC(t) = r(t) • RqJC TJ(pk) − TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) • RqJA TJ(pk) − TA = P(pk) ZqJA(t)
1.0 2.0
5.0 10
20 50
t, TIME (ms)
100 200
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
FIGURE A
tP
PP
PP
t1
1/f
DUTY
CYCLE
+
t1
f
+
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
http://onsemi.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBT6427LT1.PDF ] | |
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