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PDF MMBT6427LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBT6427LT1 | |
| Descripción | Darlington Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT6427LT1/D
Darlington Transistor
NPN Silicon
COLLECTOR 3
BASE
1
MMBT6427LT1
Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBT6427LT1 = 1V
Symbol
VCEO
VCBO
VEBO
IC
Value
40
40
12
500
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
Vdc
40 —
Vdc
40 —
Vdc
12 —
µAdc
— 1.0
nAdc
— 50
nAdc
— 50
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
1 page  
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
MMBT6427LT1
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50 100 200
t, TIME (ms)
Figure 12. Thermal Response
500 1.0 k 2.0 k
5.0 k 10 k
FIGURE A
tP
PP
PP
t1
1/f
+ +DUTY CYCLE
t1 f
t1
tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MMBT6427LT1.PDF ] | |
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