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PDF PTF10112 Data sheet ( Hoja de datos )
| Número de pieza | PTF10112 | |
| Descripción | 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTF 10112
60 Watts, 1.8–2.0 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10112 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
Typical Output Power vs. Input Power
80
• INTERNALLY MATCHED
• Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
60
40
20
0
0
VCC = 28 V
IDQ = 580 mA
f = 2000 MHz
12 34 5
Input Power (Watts)
6
A-112304516918237
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 580 mA, f = 1.99 GHz)
Drain Efficiency
(VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol
Gps
P-1dB
hD
Y
Min
11
60
—
—
Typ
12
—
41
—
Max Units
— dB
— Watts
—%
10:1 —
e
1
1 page  
e
Test Circuit
PTF 10112
Test Circuit Block Diagram for f = 1.93–1.99 GHz
Q1
l1, l6
l2
l3
l4
l5
C1, C2, C5, C8
C3, C7
C4, C6
PTF 10112
.10 l @ 2.0 GHz
.08 l @ 2.0 GHz
.162 l @ 2.0 GHz
.22 l @ 2 GHz
10 pF Chip Cap
0.1 mF Chip Cap
10 mF SMT Tantalum
LDMOS RF Transistor
Microstrip 50 W
Microstrip 9.4 W
Microstrip 70 W
Microstrip 5.8 W
Microstrip 65 W
ATC 100 B
L1
L2
R1, R2
R3
R4
R5
Circuit Board
2.7 nh
SMT Coil
4mm
SMT Ferrite Bead
220 W
Chip Resistor K1206
2K SMT Potentiometer
10 W
Chip Resistor K1206
1 W Chip Resistor K1206
e.028" Dielectric Thickness, r = 4.0,
AlliedSignal, G200, 2 oz. copper
Artwork (1 inch
)
Parts Layout (not to scale)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: [email protected]
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10112 Uen Rev. A 01-08-2000
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTF10112.PDF ] | |
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