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PDF PTF10111 Data sheet ( Hoja de datos )
| Número de pieza | PTF10111 | |
| Descripción | 6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTF 10111
6 Watts, 1.5 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier
applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
• Performance at 1.5 GHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 50% Typ
- Power Gain = 16 dB Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• 100% Lot Traceability
Typical Output Power vs. Input Power
8
7
6
5
4
3 VDD = 28V
2 IDQ = 75 mA
1 f = 1.5 GHz
0
0.0 0.1 0.2 0.3 0.4 0.5
Input Power (Watts)
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Junction Temperature
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
10111A-1234569820
Package 20222
Symbol
VDSS
VGS
TJ
PD
TSTG
RqJC
Value
65
±20
200
36
0.208
–40 to +150
4.8
Unit
Vdc
Vdc
°C
Watts
W/°C
°C
°C/W
e
1
1 page  
e
Test Circuit
PTF 10111
Test Circuit Block Diagram for f = 1.5 GHz
DUT
C1, C7–9
C2, C3
C10, C11
C4, C5
C6
C12
l1
l2
PTF 10111
33 pF, Capacitor ATC 100 B
2.2 pF, Capacitor ATC 200 B
0.1 mF, 50 V, Capacitor
1.5 pF, Capacitor ATC 100 A
2.0 pF, Capacitor ATC 100 A
100 mF, 50 V, Electrolytic Capacitor
0.21 l 1.5 GHz Microstrip 50 W
0.037 l 1.5 GHz Microstrip 33.3 W
l3
l4
l5
l6
l1
L1, L2
R1, R2, R3
Circuit Board
0.045 l 1.5 GHz Microstrip 18.5 W
0.13 l 1.5 GHz Microstrip 12.4 W
0.07 l 1.5 GHz Microstrip 19.8 W
0.20 l 1.5 GHz Microstrip 22 W
0.18 l 1.5 GHz Microstrip 50 W
3 Turn, #22 AWG, 0.120” I.D.
10 K, 1/4 W Resistor
e.028" Dielectric Thickness, r = 4.0,
AlliedSignal, G200, 2 oz. copper
Placement Diagram (not to scale)
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTF10111.PDF ] | |
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