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PDF PTB20156 Data sheet ( Hoja de datos )
| Número de pieza | PTB20156 | |
| Descripción | 8 Watts/ 1350-1850 MHz Microwave Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20156
8 Watts, 1350–1850 MHz
Microwave Power Transistor
Description
The 20156 is an NPN, common base RF power transistor intended
for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Specified 22 Volts
Class C Characteristics
Output Power: 8 Watts
Gain: 6.0 dB Min. at 8 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Gain & Return Loss vs. Frequency
(as measured in a broadband circuit)
10 0
8
Gain (dB)
VCC = 22 V
Pin = 2.0 W
-3
6 -6
4 -9
2 -12
Return Loss (dB)
0 -15
1.3 1.4 1.5 1.6 1.7 1.8 1.9
Frequency (GHz)
Maximum Ratings
Parameter
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20156LOT CODE
Package 20209
Symbol
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
4.0
2.0
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PTB20156.PDF ] | |
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