|
|
PDF PTB20151 Data sheet ( Hoja de datos )
| Número de pieza | PTB20151 | |
| Descripción | 45 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTB20151 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
e
PTB 20151
45 Watts, 1.8–2.0 GHz
PCN/PCS Power Transistor
Description
The 20151 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
45 Watts, 1.8–2.0 GHz
Class AB Characteristics
40% Collector Efficiency at 45 W
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
VCC = 26 V
20 ICQ = 100 mA
10 f = 2.0 GHz
0
0 1 23 4 5 67 8
Input Power (Watts)
9
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
9/28/98
1
20151LOT CODE
Package 20223
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
7.7
200
1.2
–40 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1 page  
e
PTB 20151
* Thermally linked to RF device.
Schematic for f = 2 GHz
Q1
PTB 20151
NPN RF Transistor
l1, l9
Microstrip 50 Ω
l2
.1 λ 2 GHz
Microstrip 75 Ω
l3
.065 λ 2 GHz
Microstrip 16 Ω
l4
.095 λ 2 GHz
Microstrip 12.5 Ω
l5
.055 λ 2 GHz
Microstrip 9.7 Ω
l6
.055 λ 2 GHz
Microstrip 12.5 Ω
l7
.065 λ 2 GHz
Microstrip 22 Ω
C1, C6
0.1 µF
1206 Chip
C2, C7
10 µF, 35 V SMT Tantalum
C3, C4, C8, C10 20 pF
ATC-100
C5, C9
0–4 pf
Johanson Trimmer
L1
L2, L4
L3
R1
Board
56 nh
SMT Inductor
3 Turn #22, 0.25” O.D.
4 mm.
SMT Ferrite
22 Ω
1206 SMT Resistor
0.031 G-200 Solid Copper Bottom, AlliedSignal
Bias Parts (not shown on layout)
Q2 BCP 56
D1 BAV 99
C10, C11
0.1 pF
R2 2K
R3, R4
10 Ω
SMT NPN Transistor
Diode
SMT Capacitor
Potentiometer
1206 SMT Resistor
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: [email protected]
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20151 Uen Rev. C 09-28-98
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet PTB20151.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTB20151 | 45 Watts/ 1.8-2.0 GHz PCN/PCS Power Transistor | Ericsson |
| PTB20155 | 9 Watts/ 610-960 MHz UHF Power Transistor | Ericsson |
| PTB20156 | 8 Watts/ 1350-1850 MHz Microwave Power Transistor | Ericsson |
| PTB20157 | 20 Watts/ 1.35-1.85 GHz RF Power Transistor | Ericsson |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |