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PDF TPC8302 Data sheet ( Hoja de datos )
| Número de pieza | TPC8302 | |
| Descripción | Silicon P Channel MOS Type (L2−MOSVI) | |
| Fabricantes | Toshiba Semiconductor | |
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TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI)
TPC8302
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Unit: mm
2.5 V Gate drive
Small footprint due to small and thin package
Low drain−source ON resistance: RDS (ON) = 100 mΩ (typ.)
High forward transfer admittance: |Yfs| = 5 S (typ.)
Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)
Enhancement−mode: Vth = −0.5~ −1.1 V (VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10s)
Single-devece value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
Single-device
operation (Note 3a)
(t = 10s)
Single-devece value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD 2)
EAS
IAR
EAR
Tch
Tstg
−20
−20
±12
−3.5
−14
1.5
1.0
0.75
0.45
16
−3.5
0.1
150
−55 150
V
V
V
A
W
W
mJ
A
mJ
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4)
and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
1 2002-05-17
1 page  
TPC8302
5 2002-05-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPC8302.PDF ] | |
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