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Datasheet TPC8302 Equivalent ( PDF ) |
| P/N | Descripción | Fabr. | |
| TPC8302 | Silicon P Channel MOS Type (L2−MOSVI) TPC8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L π MOSVI)
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TPC8302
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
2.5 V Gate drive Small footprint due to small and thin package Low drain source ON resistance: RDS (ON) = 100 mΩ (typ.) High forward transfer admittance: |Yfs| = 5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
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TPC8 Datasheet ( Hoja de datos ) - Resultados que coinciden |
| P/N | Descripción | Fabr. | |
| TPC8001 | Silicon N Channel MOS Type (MOSVI)
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| TPC8002 | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
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| TPC8003 | Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
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| TPC8004 | Silicon N Channel MOS Type (MOSVI)
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| TPC8005-H | Silicon N Channel MOS Type (High Speed U−MOS)
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| TP2412 | Low Noise CMOS RRIO Op Amps
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| TPC112S1 | Low-Power, High-Performance DAC
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nuevas actualizaciones
| P/N | Descripción | Fabr. | |
| 2N3904 | NXP's 2N3904 NPN transistor is a general-purpose, low-power, small-signal transistor. It is ideal for switching small loads, amplifying low-level signals, and for educational or hobby projects. |
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