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PDF 2SD1330 Data sheet ( Hoja de datos )

Número de pieza 2SD1330
Descripción Silicon NPN epitaxial planer type(For low-voltage output amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SD1330 Hoja de datos, Descripción, Manual

Transistor
2SD1330
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Low ON resistance Ron.
q High foward current transfer ratio hFE.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 25V, IC = 0
100 nA
Collector to base voltage
VCBO
IC = 10µA, IE = 0
25
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
20
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
12
V
Forward current transfer ratio
hFE1*1
hFE2
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 1A*2
200 800
60
Collector to emitter saturation voltage VCE(sat)
IC = 0.5A, IB = 20mA
0.13 0.4
V
Base to emitter saturation voltage VBE(sat)
IC = 0.5A, IB = 50mA
1.2 V
Transition frequency
fT VCB = 10V, IE = –50mA, f = 200MHz
200 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
10 pF
ON resistanse
Ron*3
1.0
*1hFE1 Rank classification
Rank
R
S
T
*3Ron Measurement circuit
1k
IB=1mA
*2 Pulse measurement
hFE1 200 ~ 350 300 ~ 500 400 ~ 800
VB VV VA
f=1kHz
V=0.3V
Ron=
VB
VA–VB
!1000()
1

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