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Número de pieza | AM1011-075 | |
Descripción | L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AM1011-075 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AM1011-075
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 75 W MIN. WITH 9.2 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM1011-075
BRANDING
1011-75
DESCRIPTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
Pa ra met er
PDISS
Power Dissipation* (TC ≤ 100°C)
IC Device Current*
VCC Collector-Supply Voltage*
TJ Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
September 1992
Value
175
5.4
55
250
− 65 to +200
Unit
W
A
V
°C
°C
0.86 °C/W
1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AM1011-075.PDF ] |
Número de pieza | Descripción | Fabricantes |
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