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PDF AM1011-070 Data sheet ( Hoja de datos )
| Número de pieza | AM1011-070 | |
| Descripción | RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS | |
| Fabricantes | STMicroelectronics | |
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AM1011-070
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 70 W MIN. WITH 6.7 dB GAIN
.400 x .400 2NLFL (S042)
hermeticaly sealed
ORDER CODE
AM1011-70
BRANDING
1011-70
DESCRIPTION
The AM1011-070 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-070 is supplied in the AMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
200
8.0
32
250
− 65 to +200
Unit
W
A
V
°C
°C
0.68 °C/W
September 1992
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AM1011-070.PDF ] | |
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