(PDF) BCV26 Datasheet - PNP Darlington Transistor

Número de pieza	BCV26
Descripción	PNP Darlington Transistor
Fabricantes	Fairchild Semiconductor
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No Preview Available ! Discrete POWER & Signal Technologies BCV26 C SOT-23 Mark: FD E B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 30 40 10 1.2 -55 to +150 These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJA Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. Max *BCV26 350 2.8 357 Units V V V A °C Units mW mW /°C °C/W ã 1997 Fairchild Semiconductor Corporation 1 page

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