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PDF BS250P Data sheet ( Hoja de datos )

Número de pieza BS250P
Descripción P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricantes Zetex Semiconductors　
Logotipo Zetex Semiconductors Logotipo



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No Preview Available ! BS250P Hoja de datos, Descripción, Manual

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – SEPT 93
FEATURES
* 45 Volt VDS
* RDS(on)=14Ω
BS250P
REFER TO ZVP2106A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb =25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at Tamb =25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
D
G
S
E-Line
TO92 Compatible
VALUE
-45
-230
-3
±20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-45
V ID=-100µA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
-1
-3.5 V
ID=-1mA, VDS=VGS
Gate Body Leakage
Zero Gate Voltage
Drain Current
IGSS
IDSS
-20
-500
nA
nA
VGS=-15V, VDS=0V
VGS=0V, VDS=-25V
Static Drain-Source
RDS(on)
on-State Resistance (1)
14 Ω
VGS=-10V, ID=-200mA
Forward
gfs
Transconductance (1)(2)
150 mS VDS=-10V, ID=-200mA
Input Capacitance (2) Ciss
60 pF VGS=0V, VDS=-10V
f=1MHz
Turn-On Time (2)(3)
t(on)
20 ns VDD≈-25V, ID=-500mA
Turn-Off Time (2)(3) t(off)
20 ns
(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
(3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
3-28

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