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PDF BS250F Data sheet ( Hoja de datos )
| Número de pieza | BS250F | |
| Descripción | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
BS250F
S
D
PARTMARKING DETAIL MX
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VDS
ID
IDM
VGS
Ptot
Tj:Tstg
SOT23
VALUE
-45
-90
-1.6
± 20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -45 -70
V ID=-100µA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1
-3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
-20 nA
-0.5. µA
VGS=-15V, VDS=0V
VDS=-25V, VGS=0V
Static Drain-Source On-State RDS(on)
Resistance (1)
9 14 Ω VGS=-10V,ID=-200mA
Forward Transconductance
(1)(2)
gfs
90 mS VDS=-10V,ID=-200mA
Input Capacitance (2)
Ciss
25 pF VDS=-10V, VGS=0V,
f=1MHz
Turn-On Delay Time (2)(3)
td(on)
10 ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
tr
td(off)
10 ns VDD≈-25V, ID=-200mA
10 ns
Fall Time (2)(3)
tf
10 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 55
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BS250F.PDF ] | |
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