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PDF BSS169 Data sheet ( Hoja de datos )
| Número de pieza | BSS169 | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BSS169 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
Product Summary
V DS
R DS(on),max
I Dss,min
BSS169
100 V
12 Ω
0.09 A
SOT-23
Type
BSS169
Package
SOT-23
Ordering Code
Q67000-S322
Tape and Reel Information
E6327: 3000 pcs/reel
Marking
SFs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.17 A, V DS=80 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
0.17
0.14
0.68
6
±20
Class 1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.0
page 1
2003-03-26
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
0.5
10 V
1V
0.4
0.3
0.2
0.1
BSS169
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
15
-0.2 V 0 V 0.2 V
0.5 V
-0.1 V 0.1 V
0.5 V
0.2 V
0.1 V
0V
-0.1 V
-0.2 V
10
5
1V
10 V
0
0246
V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
8 10
0
0 0.1 0.2 0.3 0.4 0.5
I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
0.5 0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
-2
Rev. 1.0
-1 0
V GS [V]
1
0
2 0.0 0.1 0.2 0.3 0.4 0.5
I D [A]
page 5
2003-03-26
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSS169.PDF ] | |
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