(PDF) BSS169 Datasheet - SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

Número de pieza	BSS169
Descripción	SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Fabricantes	Siemens Semiconductor Group
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No Preview Available ! SIPMOS ® Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance BSS 169 Preliminary data Pin 1 G Pin 2 S Pin 3 D Type BSS 169 VDS 100 V ID 0.12 A RDS(on) 12 Ω Package SOT-23 Maximum Ratings Parameter Drain source voltage Drain-gate voltage RGS = 20 kΩ Gate source voltage Gate-source peak voltage, aperiodic Continuous drain current TA = 25 °C DC drain current, pulsed TA = 25 °C Power dissipation TA = 25 °C Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, chip-substrate - reverse side 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VDS VDGR VGS Vgs ID IDpuls Ptot Tj Tstg RthJA RthJSR Ordering Code Q67050-T7 Values 100 Unit V 100 ± 14 ± 20 0.12 A 0.36 W 0.36 -55 ... + 150 °C -55 ... + 150 ≤ 350 K/W ≤ 285 E 55 / 150 / 56 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 May-30-1996 1 page

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PDF BSS169 Data sheet ( Hoja de datos )