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PDF BSP170P Data sheet ( Hoja de datos )
| Número de pieza | BSP170P | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Final data
SIPMOS Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
Type
BSP 170 P
Package
SOT-223
Ordering Code
Q67041-S4018
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-1.9 A , VDD=-25V, RGS=25Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=-1.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
BSP 170 P
Product Summary
VDS -60 V
RDS(on) 0.3 Ω
ID -1.9 A
SOT-223
4
3
2
1 VPS05163
Gate
pin1
Drain
pin 2
Source
pin 3
Value
-1.9
-1.5
-7.6
70
0.18
-6
±20
1.8
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2002-01-16
1 page  
Final data
BSP 170 P
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
-5
BSP 170 P
Ptot = 1.8W
A
-4 gfe d c
-3.5
-3
-2.5
VGS [V]
a -4.0
b -4.5
c -5.0
d -5.5
e -6.0
b f -6.5
g -7.0
-2
-1.5 a
-1
-0.5
0
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V -5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
16
A
12
10
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
1 BSP 170 P
Ω ab
0.8
0.7
0.6
0.5
0.4
0.3
0.2
VGS [V] =
0.1 a b c
def
g
-4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0
0
0 -0.4 -0.8 -1.2 -1.6 -2
c
d
e
gf
-2.4 -2.8 A -3.4
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: tp = 80 µs
6
S
4
83
6
2
4
1
2
0
0 1 2 3 4 5 6V 8
- VGS
0
0 3 6 9 A 15
- ID
Page 5
2002-01-16
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet BSP170P.PDF ] | |
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